r07ds1035ej0400 rev.4.00 page 1 of 8 jul 30, 2013 preliminary datasheet CR12CM-12A 600v - 12a - thyristor medium power use features ? i t (av) : 12 a ? v drm : 600 v ? i gt : 30 ma ? non-insulated type ? planar passivation type outline 1 2 3 4 4 renesas packa g e code: prss0004a a - a a a ( packa g e name: to-220 ) 1 2 3 renesas package code: prss0004ag-a (package name: to-220ab) 2, 4 1 3 1. cathode 2. anode 3. gate 4. anode applications switching mode power supply, regulator for autocycle, motor control, heater control, and other general purpose control applications maximum ratings parameter symbol voltage class unit 12 repetitive peak reverse voltage v rrm 600 v non-repetitive peak reverse voltage v rsm 720 v dc reverse voltage v r (dc) 480 v repetitive peak off-state voltage v drm 600 v dc off-state voltage v d (dc) 480 v r07ds1035ej0400 rev.4.00 jul 30, 2013
CR12CM-12A preliminary r07ds1035ej0400 rev.4.00 page 2 of 8 jul 30, 2013 parameter symbol ratings unit conditions rms on-state current i t (rms) 18.8 a average on-state current i t (av) 12 a commercial frequency, sine half wave 180 conduction, tc = 91c note2 surge on-state current i tsm 360 a 60hz sine half wave 1 full cycle, peak value, non-repetitive i 2 t for fusing i 2 t 544 a 2 s value corresponding to 1 cycle of half wave 60hz, surge on-state current peak gate power dissipation p gm 5 w average gate power dissipation p g (av) 0.5 w peak gate forward voltage v fgm 6 v peak gate reverse voltage v rgm 10 v peak gate forward current i fgm 2 a junction temperature tj ? 40 to +125 c storage temperature tstg ? 40 to +125 c mass ? 2.1 g typical value electrical characteristics parameter symbol min. typ. max. unit test conditions repetitive peak reverse current i rrm ? ? 2.0 ma tj = 125c, v rrm applied repetitive peak off-state current i drm ? ? 2.0 ma tj = 125c, v drm applied on-state voltage v tm ? ? 1.6 v tc = 25c, i tm = 40 a, instantaneous value gate trigger voltage v gt ? ? 1.5 v tj = 25c, v d = 6 v, i t = 1 a gate non-trigger voltage v gd 0.2 ? ? v tj = 125c, v d = 1/2 v drm gate trigger current i gt ? ? 30 ma tj = 25c, v d = 6 v, i t = 1 a holding current i h ? 15 ? ma tj = 25c, v d = 12 v thermal resistance r th (j-c) ? ? 1.2 c/w junction to case note1 note2 notes: 1. the contact thermal resistance r th (c-f) in case of greasing is 1.0c/w. 2. case temperature is measured at anod e tab 1.5 mm away from the molded case.
CR12CM-12A preliminary r07ds1035ej0400 rev.4.00 page 3 of 8 jul 30, 2013 performance curves maximum on-state characteristics on-state current (a) on-state voltage (v) rated surge on-state current surge on-state current (a) conduction time (cycles at 60hz) 10 0 25710 1 200 240 280 120 80 40 0 160 310 2 4257 34 320 400 360 2.6 1.0 0.6 1.4 1.8 2.2 3.0 3.4 3.8 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 tc = 25c maximum transient thermal impedance characteristics (junction to case) transient thermal impedance (c/w) time (s) gate trigger voltage vs. junction temperature junction temperature (c) gate voltage (v) gate current (ma) gate trigger current vs. junction temperature junction temperature (c) gate characteristics 100 (%) gate trigger current (tj = tc) gate trigger current (tj = 25c) 100 (%) gate trigger voltage (tj = tc) gate trigger voltage (tj = 25c) 10 0 23 10 1 5710 2 23 5710 3 23 5710 4 7 5 3 2 10 1 7 5 3 2 7 5 3 2 10 v fgm = 6v i fgm = 2a v gd = 0.2v p g(av) = 0.5w p gm = 5w 10 1 10 0 10 3 7 5 2 ? 60 ?1 ? 20 20 10 2 7 5 3 2 7 5 3 2 60 100 140 3 ? 40 0 40 80 120 i gt = 30ma 10 ?1 23 10 ?4 5710 ?3 23 5710 ?2 23 5 7 10 1 10 3 7 5 3 2 20 10 2 7 5 3 2 60 100 140 04080 120 10 ? 1 10 ? 2 10 1 7 5 2 10 0 7 5 3 2 7 5 3 2 3 ? 60 ? 20 ? 40 typical example typical example v gt = 1.5v
CR12CM-12A preliminary r07ds1035ej0400 rev.4.00 page 4 of 8 jul 30, 2013 maximum average power dissipation (single-phase half wave) average power dissipation (w) average on-state current (a) allowable case temperature vs. average on-state current (single-phase half wave) case temperature (c) average on-state current (a) 28 20 24 04 8 12 16 32 56 64 48 40 32 24 16 0 8 160 120 100 60 20 0 16 0 2 40 80 140 468 1214 10 resistive, inductive loads 360 resistive, inductive loads 360 60 90 120 180 = 30 60 90 120 180 = 30 case temperature (c) maximum average power dissipation (single-phase full wave) average power dissipation (w) average on-state current (a) allowable case temperature vs. average on-state current (single-phase full wave) allowable ambient temperature vs. average on-state current (single-phase full wave) allowable ambient temperature vs. average on-state current (single-phase half wave) ambient temperature (c) ambient temperature (c) average on-state current (a) average on-state current (a) average on-state current (a) 1.4 1.0 1.2 00.2 0.4 0.6 0.8 1.6 64 48 40 24 8 0 32 0 4 16 32 56 81216 2428 20 60 90 120 = 30 resistive loads 360 60 90 120 180 = 30 160 120 100 60 20 0 40 80 140 180 = 30 160 120 100 60 20 0 40 80 140 1.4 1.0 1.2 00.20.4 0.6 0.8 1.6 160 120 100 60 20 0 40 80 140 60 90 120 = 30 32 04 81216 2428 20 60 90 120 resistive, inductive loads natural convection 360 resistive loads 360 resistive loads natural convection 360 180 180
CR12CM-12A preliminary r07ds1035ej0400 rev.4.00 page 5 of 8 jul 30, 2013 average power dissipation (w) case temperature (c) average on-state current (a) average on-state current (a) maximum average power dissipation (rectangular wave) allowable case temperature vs. average on-state current (rectangular wave) 56 64 48 40 32 24 16 0 8 180 270 dc = 30 160 120 100 60 20 0 40 80 140 32 04 81216 2428 20 32 0481216 2428 20 60 90 120 270 dc = 30 60 120 360 resistive, inductive loads 360 resistive, inductive loads ambient temperature (c) average on-state current (a) allowable ambient temperature vs. average on-state current (rectangular wave) 1.4 1.0 1.2 00.20.4 0.6 0.8 1.6 160 120 100 60 20 0 40 80 140 60 90 270 dc 120 180 = 30 360 resistive, inductive loads natural convection breakover voltage vs. junction temperature junction temperature (c) 100 (%) breakover voltage (tj = tc) breakover voltage (tj = 25c) holding current vs. junction temperature junction temperature (c) 100 (%) holding current (tj = tc) holding current (tj = 25c) breakover voltage vs. rate of rise of off-state voltage rate of rise of off-state voltage (v/ s) 100 (%) breakover voltage (dv/dt = vv/ s) breakover voltage (dv/dt = 1v/ s) 40 60 40 20 160 180 200 120 100 60 20 0 140 80 140 080 100 120 ? 60 ? 20 ? 40 60 40 20 140 080 100 120 10 1 10 3 7 5 3 2 10 2 7 5 3 2 160 0 10 1 10 2 23 23 57 57 23 57 10 3 10 4 80 60 40 20 100 120 140 ? 60 ? 20 ? 40 typical example typical example tj = 125c typical example 90 180
CR12CM-12A preliminary r07ds1035ej0400 rev.4.00 page 6 of 8 jul 30, 2013 40 60 40 20 160 180 200 120 100 60 20 0 140 80 140 080 100 120 ? 60 ? 20 ? 40 typical example 10 1 10 3 7 5 3 2 10 2 7 5 3 2 10 2 23 10 ?1 5710 0 23 5710 1 23 5 7 gate trigger current vs. gate current pulse width 100 (%) gate trigger current (tw) gate trigger current (dc) junction temperature (c) 100 (%) repetitive peak reverse voltage (tj = tc) repetitive peak reverse voltage (tj = 25c) gate current pulse width ( s) repetitive peak reverse voltage vs. junction temperature typical example
CR12CM-12A preliminary r07ds1035ej0400 rev.4.00 page 7 of 8 jul 30, 2013 package dimensions unit: mm sc -4 6 2.1 g mass[t y p. ] t o -22 0 ab s pr ss000 4a g - a rene s a s c od e jeita packa g e cod e previous c ode packa g e nam e t o -22 0 a b 9.9 0.2 4.5 0.2 2.8 0.1 15.7 0.2 9.2 0.2 13.08 0.20 0.80 0.10 2.6 max 1.62 max 10.0 0.2 2.54 2.54 (3.00) 3.6 0.2 1.30 + 0.10 ? 0.05 0.50 + 0.10 ? 0.05 sc -4 6 2.0 g mass[t y p. ] ?
CR12CM-12A preliminary r07ds1035ej0400 rev.4.00 page 8 of 8 jul 30, 2013 ordering information orderable part number packing quantity remark CR12CM-12A#bb0 tube 50 pcs. straight type CR12CM-12A-a8#bb0 tube 50 pcs. a8 lead form note: please confirm the specificati on about the shipping in detail.
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